Design a simple MOS current mirror of the type shown in the provided circuit image to meet the following constraints:
(a) Transistor $M_2$ must operate in the active region for values of $V_{\text {OUT }}$ to within 0.2 V of ground.
(b) The output current must be $50 \mu \mathrm{~A}$.
(c) The output current must change less than 1 percent for a change in output voltage of 1 V .

Make $M_1$ and $M_2$ identical. You are to minimize the total device area within the given constraints. Here the device area will be taken to be the total gate $\operatorname{area}(W \times L$ product $)$. Assume $X_d=0$.